@article {1138,
	title = {Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction},
	journal = {Nano Letters},
	volume = {22},
	year = {2022},
	note = {PMID: 35258977},
	pages = {2236-2243},
	keywords = {GaN; artificial photosynthesis; nanowire; photoelectrode; surface polarity},
	doi = {10.1021/acs.nanolett.1c04220},
	url = {https://doi.org/10.1021/acs.nanolett.1c04220},
	author = {Xiao, Yixin and Vanka, Srinivas and Pham, Tuan Anh and Dong, Wan Jae and Sun, Yi and Liu, Xianhe and Navid, Ishtiaque Ahmed and Varley, Joel B. and Hajibabaei, Hamed and Hamann, Thomas W. and Ogitsu, Tadashi and Mi, Zetian}
}
@article {1188,
	title = {Long-term stability studies of a semiconductor photoelectrode in three-electrode configuration},
	journal = {Journal of Materials Chemistry A},
	volume = {7},
	year = {2019},
	pages = {27612-27619},
	abstract = {Improving the stability of semiconductor materials is one of the major challenges for sustainable and economic photoelectrochemical water splitting. N-terminated GaN nanostructures have emerged as a practical protective layer for conventional high efficiency but unstable Si and III{\textendash}V photoelectrodes due to their near-perfect conduction band-alignment, which enables efficient extraction of photo-generated electrons, and N-terminated surfaces, which protects against chemical and photo-corrosion. Here, we demonstrate that Pt-decorated GaN nanostructures on an n+{\textendash}p Si photocathode can exhibit an ultrahigh stability of 3000 h (i.e., over 500 days for usable sunlight \~{}5.5 h per day) at a large photocurrent density (>35 mA cm-2) in three-electrode configuration under AM 1.5G one-sun illumination. The measured applied bias photon-to-current efficiency of 11.9\%, with an excellent onset potential of \~{}0.56 V vs. RHE, is one of the highest values reported for a Si photocathode under AM 1.5G one-sun illumination. This study provides a paradigm shift for the design and development of semiconductor photoelectrodes for PEC water splitting: stability is no longer limited by the light absorber, but rather by co-catalyst particles.},
	keywords = {durability, GaN nanowires, PEC, Photocathode, Pt hydrogen evolution catalyst, Silicon},
	doi = {10.1039/C9TA09926C},
	url = {http://dx.doi.org/10.1039/C9TA09926C},
	author = {Vanka, Srinivas and Sun, Kai and Zeng, Guosong and Pham, Tuan Anh and Toma, Francesca Maria and Ogitsu, Tadashi and Mi, Zetian}
}
