@article {1085, title = {Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting}, journal = {Nature Communications}, volume = {9}, year = {2018}, month = {09/2018}, pages = {3856}, abstract = {

Published on September 21st, 2018. Sunlight-harvesting materials require the clean integration of light-absorbing and catalytic components to be efficient. Here, authors link silicon photoelectrodes and molybdenum sulfide catalysts with defect-free gallium nitride nanowire to improve photoelectrochemical hydrogen evolution.

}, issn = {2041-1723}, doi = {10.1038/s41467-018-06140-1}, url = {https://www.nature.com/articles/s41467-018-06140-1}, author = {Baowen Zhou and Xianghua Kong and Srinivas Vanka and Sheng Chu and Pegah Ghamari and Yichen Wang and Nick Pant and Ishiang Shih and Hong Guo and Zetian Mi} } @article {1042, title = {Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV}, journal = {ACS Energy Letters}, volume = {3}, year = {2018}, note = {

{\textquoteright}doi: 10.1021/acsenergylett.0c01132\n - I.Am.Hydrogen{\textquoteright} {\textquoteright}\n - jyoungstrom{\textquoteright} {\textquoteright}Jason thinks this is great.\n\ \n - jyoungstrom{\textquoteright} {\textquoteright}\n - estechel{\textquoteright}

}, pages = {307-314}, abstract = {

Published on February 9th, 2018. The performance of overall solar water splitting has been largely limited by the half-reaction of water oxidation. Here, we report a 1.7 eV bandgap InGaN nanowire photoanode for efficient solar water oxidation. It produces a low onset potential of 0.1 V versus a reversible hydrogen electrode (RHE) and a high photocurrent density of 5.2 mA/cm2 at a potential as low as 0.6 V versus RHE. The photoanode yields a half-cell solar energy conversion efficiency up to 3.6\%, a record for a single-photon photoanode to our knowledge. Furthermore, in the presence of hole scavengers, the photocurrent density of the InGaN photoanode reaches 21.2 mA/cm2 at 1.23 V versus RHE, which approaches the theoretical limit for a 1.7 eV InGaN absorber. The InGaN nanowire photoanode may serve as an ideal top cell in a photoelectrochemical tandem device when stacked with a 0.9{\textendash}1.2 eV bandgap bottom cell, which can potentially deliver solar-to-hydrogen efficiency over 25\%.

}, doi = {10.1021/acsenergylett.7b01138}, url = {https://doi.org/10.1021/acsenergylett.7b01138}, author = {Sheng Chu and Srinivas Vanka and Yichen Wang and Jiseok Gim and Yongjie Wang and Yong-Ho Ra and Robert Hovden and Hong Guo and Ishiang Shih and Zetian Mi} }