@article {1138,
	title = {Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction},
	journal = {Nano Letters},
	volume = {22},
	year = {2022},
	note = {PMID: 35258977},
	pages = {2236-2243},
	keywords = {GaN; artificial photosynthesis; nanowire; photoelectrode; surface polarity},
	doi = {10.1021/acs.nanolett.1c04220},
	url = {https://doi.org/10.1021/acs.nanolett.1c04220},
	author = {Xiao, Yixin and Vanka, Srinivas and Pham, Tuan Anh and Dong, Wan Jae and Sun, Yi and Liu, Xianhe and Navid, Ishtiaque Ahmed and Varley, Joel B. and Hajibabaei, Hamed and Hamann, Thomas W. and Ogitsu, Tadashi and Mi, Zetian}
}
@article {1182,
	title = {Conditions for stable operation of solid oxide electrolysis cells: oxygen electrode effects},
	journal = {Energy Environ. Sci.},
	volume = {12},
	year = {2019},
	pages = {3053-3062},
	abstract = {Solid oxide electrolysis cells (SOECs) convert renewable electricity to fuels with efficiency substantially higher than other electrolysis technologies. However, questions remain regarding degradation mechanisms that limit SOEC long-term stability. One of the key degradation mechanisms is oxygen electrode delamination; although prior studies have improved the understanding of this mechanism, it is still difficult to predict how degradation depends on SOEC materials and operating conditions, i.e., temperature, voltage, and current density. Here we present a study aimed at developing a quantitative understanding of oxygen electrode delamination. Experimentally, a life test study of symmetric and full cells with yttria-stabilized zirconia (YSZ) electrolytes and Gd-doped ceria (GDC) barrier layers was done with three different perovskite oxygen electrode materials. Fracture was observed at the perovskite{\textendash}GDC interface above a critical current density and below a critical operating temperature. A theory is presented that combines a calculation of the effective oxygen pressure across the electrolyte with an estimation of the pressure required for fracture. Fracture is correctly predicted for a critical oxygen partial pressure of \~{}7200 atm and an associated electrode overpotential of \~{}0.2 V, occurring at the electrode/GDC interface because of the relatively low perovskite fracture toughness. Damage at the GDC/YSZ interface was also observed in some cases and explained by a peak in the oxygen pressure at this interface.},
	keywords = {Gd-doped ceria, HTE, Perovskite, SOEC, Yttria-stabilized zirconia},
	doi = {10.1039/C9EE01664C},
	url = {http://dx.doi.org/10.1039/C9EE01664C},
	author = {Park, Beom-Kyeong and Zhang, Qian and Voorhees, Peter W. and Barnett, Scott A.}
}
@article {1186,
	title = {High performance III-V photoelectrodes for solar water splitting via synergistically tailored structure and stoichiometry},
	journal = {Nature Communications},
	volume = {10},
	year = {2019},
	pages = {3388},
	keywords = {Ammonium sulfide surface passivation, Antireflection, Density graded surface, GaInP2, III-V, PEC, Photocathode},
	doi = {10.1038/s41467-019-11351-1},
	author = {Lim, Haneol and Young, James L. and Geisz, John F. and Friedman, Daniel J. and Deutsch, Todd G. and Yoon, Jongseung}
}
@article {1187,
	title = {Interfacial engineering of gallium indium phosphide photoelectrodes for hydrogen evolution with precious metal and non-precious metal based catalysts},
	journal = {Journal of Materials Chemistry A},
	volume = {7},
	year = {2019},
	pages = {16821-16832},
	abstract = {Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties to serve as the large bandgap, top junction in a dual absorber tandem solar water splitting device. Poor intrinsic catalytic ability and surface corrosion in aqueous electrolyte remain key obstacles. Significant progress has been made developing thin-film protection layers and active catalysts for photoelectrochemical devices, but combining these into a catalytic protection layer that can provide long-term stability without sacrificing performance has proven difficult due, in large part, to challenges in developing active and stable interfaces. In this work, we demonstrate that a nanoscale molybdenum disulfide (MoS2) film functions both as an effective protection layer and excellent hydrogen evolution catalyst for GaInP2 photocathodes, with only a \~{}10\% loss in initial light-limited current density after 100 h, and a photocurrent onset potential better than that of the same state-of-the-art device with a platinum{\textendash}ruthenium catalyst. Using transient photoreflectance spectroscopy, we probed the carrier dynamics of these photocathodes and show that the MoS2 coated device exhibits improved electron transfer at the surface interface compared to the PtRu catalyzed device. These MoS2 protected devices are among the most active and stable single-absorber photocathodes for solar water splitting to date and offer a promising pathway towards generating hydrogen with high efficiency and significant longevity.},
	keywords = {durability, GaInP2, III-V, MoS2 hydrogen evolution catalyst, MoS2 protective coating, PEC, Photocathode},
	doi = {10.1039/C9TA05247J},
	url = {http://dx.doi.org/10.1039/C9TA05247J},
	author = {Britto, Reuben J. and Young, James L. and Yang, Ye and Steiner, Myles A. and LaFehr, David T. and Friedman, Daniel J. and Beard, Mathew and Deutsch, Todd G. and Jaramillo, Thomas F.}
}
@article {1188,
	title = {Long-term stability studies of a semiconductor photoelectrode in three-electrode configuration},
	journal = {Journal of Materials Chemistry A},
	volume = {7},
	year = {2019},
	pages = {27612-27619},
	abstract = {Improving the stability of semiconductor materials is one of the major challenges for sustainable and economic photoelectrochemical water splitting. N-terminated GaN nanostructures have emerged as a practical protective layer for conventional high efficiency but unstable Si and III{\textendash}V photoelectrodes due to their near-perfect conduction band-alignment, which enables efficient extraction of photo-generated electrons, and N-terminated surfaces, which protects against chemical and photo-corrosion. Here, we demonstrate that Pt-decorated GaN nanostructures on an n+{\textendash}p Si photocathode can exhibit an ultrahigh stability of 3000 h (i.e., over 500 days for usable sunlight \~{}5.5 h per day) at a large photocurrent density (>35 mA cm-2) in three-electrode configuration under AM 1.5G one-sun illumination. The measured applied bias photon-to-current efficiency of 11.9\%, with an excellent onset potential of \~{}0.56 V vs. RHE, is one of the highest values reported for a Si photocathode under AM 1.5G one-sun illumination. This study provides a paradigm shift for the design and development of semiconductor photoelectrodes for PEC water splitting: stability is no longer limited by the light absorber, but rather by co-catalyst particles.},
	keywords = {durability, GaN nanowires, PEC, Photocathode, Pt hydrogen evolution catalyst, Silicon},
	doi = {10.1039/C9TA09926C},
	url = {http://dx.doi.org/10.1039/C9TA09926C},
	author = {Vanka, Srinivas and Sun, Kai and Zeng, Guosong and Pham, Tuan Anh and Toma, Francesca Maria and Ogitsu, Tadashi and Mi, Zetian}
}
@article {1192,
	title = {Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures},
	journal = {ACS Energy Letters},
	volume = {4},
	year = {2019},
	pages = {1541-1548},
	keywords = {durability, GaAs, GaInP2, GaN nanowires, Ge, III-V, PEC, Photocathode, Unbiased water splitting},
	doi = {10.1021/acsenergylett.9b00549},
	url = {https://doi.org/10.1021/acsenergylett.9b00549},
	author = {Wang, Yongjie and Schwartz, Jonathan and Gim, Jiseok and Hovden, Robert and Mi, Zetian}
}
