@article {1188,
	title = {Long-term stability studies of a semiconductor photoelectrode in three-electrode configuration},
	journal = {Journal of Materials Chemistry A},
	volume = {7},
	year = {2019},
	pages = {27612-27619},
	abstract = {Improving the stability of semiconductor materials is one of the major challenges for sustainable and economic photoelectrochemical water splitting. N-terminated GaN nanostructures have emerged as a practical protective layer for conventional high efficiency but unstable Si and III{\textendash}V photoelectrodes due to their near-perfect conduction band-alignment, which enables efficient extraction of photo-generated electrons, and N-terminated surfaces, which protects against chemical and photo-corrosion. Here, we demonstrate that Pt-decorated GaN nanostructures on an n+{\textendash}p Si photocathode can exhibit an ultrahigh stability of 3000 h (i.e., over 500 days for usable sunlight \~{}5.5 h per day) at a large photocurrent density (>35 mA cm-2) in three-electrode configuration under AM 1.5G one-sun illumination. The measured applied bias photon-to-current efficiency of 11.9\%, with an excellent onset potential of \~{}0.56 V vs. RHE, is one of the highest values reported for a Si photocathode under AM 1.5G one-sun illumination. This study provides a paradigm shift for the design and development of semiconductor photoelectrodes for PEC water splitting: stability is no longer limited by the light absorber, but rather by co-catalyst particles.},
	keywords = {durability, GaN nanowires, PEC, Photocathode, Pt hydrogen evolution catalyst, Silicon},
	doi = {10.1039/C9TA09926C},
	url = {http://dx.doi.org/10.1039/C9TA09926C},
	author = {Vanka, Srinivas and Sun, Kai and Zeng, Guosong and Pham, Tuan Anh and Toma, Francesca Maria and Ogitsu, Tadashi and Mi, Zetian}
}
