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InGaN
An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer
Submitted by
drupaladmin
on Thu, 08/20/2020 - 11:08
Wang Y
,
Vanka S
,
Gim J
,
Wu Y
,
Fan R
,
Zhang Y
,
Shi J
,
Shen M
,
Hovden R
,
Mi Z
. 2019.
An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer
.
Nano Energy. 57:405-413.
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