|Title||Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV|
|Publication Type||Journal Article|
|Year of Publication||2018|
|Authors||Chu S, Vanka S, Wang Y, Gim J, Wang Y, Ra Y-H, Hovden R, Guo H, Shih I, Mi Z|
|Journal||ACS Energy Letters|
Published on February 9th, 2018. The performance of overall solar water splitting has been largely limited by the half-reaction of water oxidation. Here, we report a 1.7 eV bandgap InGaN nanowire photoanode for efficient solar water oxidation. It produces a low onset potential of 0.1 V versus a reversible hydrogen electrode (RHE) and a high photocurrent density of 5.2 mA/cm2 at a potential as low as 0.6 V versus RHE. The photoanode yields a half-cell solar energy conversion efficiency up to 3.6%, a record for a single-photon photoanode to our knowledge. Furthermore, in the presence of hole scavengers, the photocurrent density of the InGaN photoanode reaches 21.2 mA/cm2 at 1.23 V versus RHE, which approaches the theoretical limit for a 1.7 eV InGaN absorber. The InGaN nanowire photoanode may serve as an ideal top cell in a photoelectrochemical tandem device when stacked with a 0.9–1.2 eV bandgap bottom cell, which can potentially deliver solar-to-hydrogen efficiency over 25%.
'doi: 10.1021/acsenergylett.0c01132\n - I.Am.Hydrogen' '\n - jyoungstrom' 'Jason thinks this is great.\n \n - jyoungstrom' '\n - estechel'
Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV
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